๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Sericin for Resistance Switching Device with Multilevel Nonvolatile Memory

โœ Scribed by Wang, Hong; Meng, Fanben; Cai, Yurong; Zheng, Liyan; Li, Yuangang; Liu, Yuanjun; Jiang, Yueyue; Wang, Xiaotian; Chen, Xiaodong


Book ID
121527438
Publisher
John Wiley and Sons
Year
2013
Tongue
English
Weight
758 KB
Volume
25
Category
Article
ISSN
0935-9648

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


Resistive-switching mechanism of transpa
โœ Wang, Yongshun ๐Ÿ“‚ Article ๐Ÿ“… 2011 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 386 KB

## Abstract We report an indiumโ€free transparent resistive switching random access memory (TRRAM) device based on a galliumโ€doped zinc oxide (GZO)โ€Ga~2~O~3~โ€ZnOโ€Ga~2~O~3~โ€GZO structure grown by metalโ€organic chemical vapor deposition. The bipolar resistiveโ€switching behavior is investigated based o