Sensitivity mechanism of metal oxides to oxygen detected by means of kinetic studies at high temperatures
β Scribed by J. Gerblinger; U. Lampe; H. Meixner
- Book ID
- 103961285
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 417 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0925-4005
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The damage produced by implantation of Er ions of 400 keV at a fluence of 5 Γ 10 15 ions/cm 2 in silicon was investigated by Rutherford backscattering spectrometry with 2.1 MeV He 2+ ions with multiple scattering models. It was found that the damage around the Si surface was almost removed after ann
## Abstract Atomic resonance absorption spectroscopy has been used to investigate the thermal decomposition of N~2~O by monitoring the formation of O atoms behind reflected shock waves in the temperature range 1490β2490 K and at total pressures from 58 to 347 kPa, by using the mixtures of N~2~O hig