Semiempirical model of carrier mobility in silicon carbide for analyzing its dependence on temperature and doping level

✍ Scribed by T. T. Mnatsakanov; L. I. Pomortseva; S. N. Yurkov

• Book ID: 110126623
• Publisher: Springer
• Year: 2001
• Tongue: English
• Weight: 50 KB
• Volume: 35
• Category: Article
• ISSN: 1063-7826
• DOI: 10.1134/1.1365181