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A physical model for the dependence of carrier lifetime on doping density in nondegenerate silicon : J. G. Fossum and D. S. Lee. Solid-St. Electron.25 (8), 741 (1982)


Book ID
107829475
Publisher
Elsevier Science
Year
1983
Tongue
English
Weight
123 KB
Volume
23
Category
Article
ISSN
0026-2714

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