<p><p>This book discusses semiconductor properties, pn-junctions and the physical phenomena for understanding power devices in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production
Semiconductor Power Devices: Physics, Characteristics, Reliability
β Scribed by Josef Lutz, Heinrich Schlangenotto, Uwe Scheuermann, Rik De Doncker (auth.)
- Publisher
- Springer-Verlag Berlin Heidelberg
- Year
- 2011
- Tongue
- English
- Leaves
- 550
- Edition
- 1
- Category
- Library
No coin nor oath required. For personal study only.
β¦ Synopsis
Semiconductor power devices are the heart of power electronics. They determine the performance of power converters and allow topologies with high efficiency. Semiconductor properties, pn-junctions and the physical phenomena for understanding power devices are discussed in depth. Working principles of state-of-the-art power diodes, thyristors, MOSFETs and IGBTs are explained in detail, as well as key aspects of semiconductor device production technology. In practice, not only the semiconductor, but also the thermal and mechanical properties of packaging and interconnection technologies are essential to predict device behavior in circuits. Wear and aging mechanisms are identified and reliability analyses principles are developed. Unique information on destructive mechanisms, including typical failure pictures, allows assessment of the ruggedness of power devices. Also parasitic effects, such as device induced electromagnetic interference problems, are addressed. The book concludes with modern power electronic system integration techniques and trends.
β¦ Table of Contents
Front Matter....Pages i-xii
Power Semiconductor Devices β Key Components for Efficient Electrical Energy Conversion Systems....Pages 1-15
Semiconductor Properties....Pages 17-75
pn-Junctions....Pages 77-121
Short Introduction to Power Device Technology....Pages 123-157
pin-Diodes....Pages 159-224
Schottky Diodes....Pages 225-240
Bipolar Transistors....Pages 241-256
Thyristors....Pages 257-282
MOS Transistors....Pages 283-314
IGBTs....Pages 315-342
Packaging and Reliability of Power Devices....Pages 343-418
Destructive Mechanisms in Power Devices....Pages 419-473
Power Device-Induced Oscillations and Electromagnetic Disturbances....Pages 475-495
Power Electronic Systems....Pages 497-513
Back Matter....Pages 515-536
β¦ Subjects
Electronics and Microelectronics, Instrumentation; Power Electronics, Electrical Machines and Networks; Condensed Matter Physics
π SIMILAR VOLUMES
The book starts with basic semiconductor physics, followed by some aspects of production technology. It explains power diodes, thyristors, MOSFETs and IGBTs as well as discusses standard packaging technologies, materials and reliability investigations.
<p>This publication is a compilation of papers presented at the Semiconductor Device ReliabiΒ lity Workshop sponsored by the NATO International Scientific Exchange Program. The Workshop was held in Crete, Greece from June 4 to June 9, 1989. The objective of the Workshop was to review and to further
The rapid evolution of integrated circuit technology has brought with it many new materials and processing steps, at the nano-scale, which boost the electrical performance of devices, resulting in faster and more functionally-complex electronics. However, working at this reduced scale can bring seco
This book focuses on the thermal reliability of power semiconductor device by looking at the failure mechanism, thermal parameters monitoring, junction temperature estimation, lifetime evaluation, and thermal management. Theoretical analysis and experimental tests are presented to explain existing r