Semiconductor Power Devices......Page 2
Preface......Page 5
Contents......Page 7
1.1 Systems, Power Converters, and Power Semiconductor Devices......Page 13
1.1.1 Basic Principles of Power Converters......Page 15
1.1.2 Types of Power Converters and Selection of Power Devices......Page 16
1.2 Operating and Selecting Power Semiconductors......Page 19
1.3 Applications of Power Semiconductors......Page 22
References......Page 26
2.1 Introduction......Page 28
2.2 Crystal Structure......Page 30
2.3 Energy Gap and Intrinsic Concentration......Page 32
2.4 Energy Band Structure and Particle Properties of Carriers......Page 37
2.5 The Doped Semiconductor......Page 41
2.6.1 Carrier Mobilities and Field Currents......Page 50
2.6.2 High-Field Drift Velocities......Page 56
2.6.3 Diffusion of Carriers and Current Transport Equations......Page 57
2.7 Recombination-Generation and Lifetime of Non-equilibrium Carriers......Page 59
2.7.1 Intrinsic Recombination Mechanisms......Page 61
2.7.2 Recombination and Generation at Recombination Centers......Page 62
2.8 Impact Ionization......Page 71
2.9 Basic Equations of Semiconductor Devices......Page 77
2.10 Simple Conclusions......Page 80
References......Page 83
3.1 The pn-Junction in Thermal Equilibrium......Page 87
3.1.1 The Abrupt Step Junction......Page 90
3.1.2 Graded Junctions......Page 96
3.2 CurrentVoltage Characteristics of the pn-Junction......Page 99
3.3.1 Blocking Current......Page 108
3.3.2 Avalanche Multiplication and Breakdown Voltage......Page 111
Temperature Dependence......Page 119
3.3.3 Blocking Capability with Wide-Gap Semiconductors......Page 120
3.4 Injection Efficiency of Emitter Regions......Page 121
3.5 Capacitance of pn-Junctions......Page 128
References......Page 130
4.1 Crystal Growth......Page 132
4.2 Neutron Transmutation for Adjustment of the Wafer Doping......Page 135
4.3 Epitaxial Growth......Page 137
4.4 Diffusion......Page 138
4.5 Ion Implantation......Page 143
4.6 Oxidation and Masking......Page 148
4.7.1 Bevelled Termination Structures......Page 151
4.7.2 Planar Junction Termination Structures......Page 153
4.7.3 Junction Termination for Bidirectional Blocking Devices......Page 155
4.8 Passivation......Page 156
4.9.1 Gold and Platinum as Recombination Centers......Page 157
4.9.2 Radiation-Induced Recombination Centers......Page 160
4.9.3 Radiation-Enhanced Diffusion of Pt and Pd......Page 163
References......Page 164
5.1 Structure of the pin-Diode......Page 167
5.2 I-V Characteristic of the pin-Diode......Page 168
5.3 Design and Blocking Voltage of the pin-Diode......Page 170
5.4.1 Carrier Distribution......Page 175
5.4.2 Junction Voltages......Page 178
5.4.3 Voltage Drop Across the Middle Region......Page 180
5.4.4 Voltage Drop in the Hall Approximation......Page 181
5.4.5 Emitter Recombination, Effective Carrier Lifetime, and Forward Characteristic......Page 183
5.4.6 Temperature Dependency of the Forward Characteristics......Page 191
5.5 Relation Between Stored Charge and Forward Voltage......Page 192
5.6 Turn-On Behavior of Power Diodes......Page 193
5.7.1 Definitions......Page 196
5.7.2 Reverse Recovery Related Power Losses......Page 202
5.7.3 Reverse Recovery: Charge Dynamic in the Diode......Page 206
5.7.4.1 Diodes with a Doping Step in the Low-Doped Layer......Page 214
5.7.4.2 Diodes with Anode Structures for Improving the Recovery Behavior......Page 215
5.7.4.3 The EMCON Diode......Page 217
5.7.4.4 The CAL Diode CAL-diode......Page 219
5.7.4.5 The Hybrid Diode......Page 221
5.7.4.6 The Tandem Diode......Page 223
5.7.4.7 MOS-Controlled Diodes......Page 224
5.7.4.8 Diodes with Cathode Side Hole Injection......Page 229
5.8 Outlook......Page 230
References......Page 231
6.1 Aspects of the Physics of the MetalSemiconductor Junction......Page 233
6.2 CurrentVoltage Characteristics of the Schottky Junction......Page 235
6.4 Ohmic Voltage Drop of a Unipolar Device......Page 238
Example: Design of a Silicon Schottky Diode for a Rated Voltage of 200 V......Page 241
6.5 Schottky Diodes Based on SiC......Page 242
References......Page 247
7.1 Function of the Bipolar Transistor......Page 249
7.2 Structure of the Bipolar Power Transistor......Page 251
7.3 I-V Characteristic of the Power Transistor......Page 252
7.4 Blocking Behavior of the Bipolar Power Transistor......Page 253
7.5 Current Gain of the Bipolar Transistor......Page 255
7.6 Base Widening, Field Redistribution, and Second Breakdown......Page 259
7.7 Limits of the Silicon Bipolar Transistor......Page 262
7.8 SiC Bipolar Transistor......Page 263
References......Page 264
8.1 Structure and Mode of Function......Page 265
8.2 I-V Characteristic of the Thyristor......Page 268
8.3 Blocking Behavior of the Thyristor......Page 270
8.4 The Function of Emitter Shorts......Page 272
8.5 Modes to Trigger a Thyristor......Page 273
8.6 Trigger Front Spreading......Page 274
8.7 Follow-Up Triggering and Amplifying Gate......Page 275
8.8 Thyristor Turn-Off and Recovery Time......Page 278
8.9 The Triac......Page 280
8.10 The Gate Turn-Off Thyristor (GTO)......Page 281
8.11 The Gate-Commutated Thyristor (GCT)......Page 287
References......Page 289
9.1 Function Principle of the MOSFET......Page 291
9.2 Structure of Power MOSFETs......Page 293
9.3 CurrentVoltage Characteristics of MOS Transistors......Page 295
9.4 Characteristics of the MOSFET Channel......Page 296
9.5 The Ohmic Region......Page 300
9.6 Compensation Structures in Modern MOSFETs......Page 301
9.7 Switching Properties of the MOSFET......Page 306
9.8 Switching Losses of the MOSFET......Page 310
9.9 Safe Operating Area of the MOSFET......Page 311
9.10 The Inverse Diode of the MOSFET......Page 313
9.11 SiC Field Effect Devices......Page 317
References......Page 320
10.1 Mode of Function......Page 323
10.2 The IV Characteristic of the IGBT......Page 325
10.3 The Switching Behavior of the IGBT......Page 327
10.4 The Basic Types: PT-IGBT and NPT-IGBT......Page 329
10.5 Plasma Distribution in the IGBT......Page 333
10.6.1 Plasma Enhancement by High n-Emitter Efficiency......Page 335
10.6.2 The ''Latch-Up Free Cell Geometry''......Page 339
10.6.3 The Effect of the ''Hole Barrier''......Page 340
10.6.4 Collector Side Buffer Layers......Page 342
10.7 IGBTs with Bidirectional Blocking Capability......Page 343
10.8 Reverse Conducting IGBT reverse conducting IGBT s......Page 345
References......Page 348
11.1 The Challenge of Packaging Technology......Page 351
11.2 Package Types......Page 352
11.2.1 Capsules......Page 354
11.2.2 The TO Family and Its Relatives......Page 356
11.2.3 Modules......Page 361
11.3 Physical Properties of Materials......Page 366
11.4.1 Transformation Between Thermo-dynamicaland Electrical Parameters......Page 368
11.4.2 One-Dimensional Equivalent Networks......Page 375
11.4.3 The Three-Dimensional Thermal Network......Page 377
11.4.4 The Transient Thermal Resistance......Page 378
11.5.1 Parasitic Resistances......Page 381
11.5.2 Parasitic Inductance......Page 382
11.5.3 Parasitic Capacities......Page 386
11.6.1 The Demand for Increasing Reliability......Page 388
11.6.2 High Temperature Reverse Bias Test......Page 391
11.6.3 High Temperature Gate Stress Test......Page 393
11.6.4 Temperature Humidity Bias Test......Page 394
11.6.5 High Temperature and Low Temperature Storage Tests......Page 395
11.6.6 Temperature Cycling and Temperature Shock Test......Page 396
11.6.7 Power Cycling Test......Page 398
11.6.7.1 Weibull Statistics for Power Cycling Analysis......Page 401
11.6.7.2 Models for Lifetime Prediction......Page 402
11.6.7.3 Superimposition of Power Cycles......Page 405
11.6.7.4 Bond Wire Lift-Off......Page 407
11.6.7.5 Reconstruction of Metallization......Page 408
11.6.7.6 Solder Fatigue......Page 411
11.6.7.7 Power Cycling Capability of Molded TO Package......Page 415
11.6.7.8 Comparability of Power Cycling Lifetime Curves......Page 417
11.6.8 Additional Reliability Tests......Page 418
11.6.9 Strategies for Enhanced Reliability......Page 419
11.7 Future Challenges......Page 420
References......Page 424
12.1 Thermal Breakdown Failures by Excess Temperature......Page 427
12.2 Surge Current......Page 429
12.3 Overvoltage Voltage Above Blocking Capability......Page 434
12.4.1 Dynamic Avalanche in Bipolar Devices......Page 440
Dynamic Avalanche of the First Degree......Page 441
Dynamic Avalanche of the Second Degree......Page 443
Dynamic Avalanche of the Third Degree......Page 445
12.4.3 Diode Structures with High Dynamic Avalanche Capability......Page 450
12.5 Exceeding the Maximum Turn-Off Current of GTOs......Page 454
12.6.1 Short-Circuit Types I, II, and III......Page 455
12.6.2 Thermal and Electrical Stress in Short Circuit......Page 460
Thermal Limits for Medium-Voltage IGBTs......Page 463
Current Filamentation as Limit for the Short-Circuit Capability of High-Voltage IGBTs......Page 466
12.6.3 Turn-Off of Over-Current and Dynamic Avalanche......Page 468
12.7 Cosmic Ray Failures......Page 470
12.8 Failure Analysis......Page 476
References......Page 478
13.1 Frequency Range of Electromagnetic Disturbances......Page 482
Harmonics......Page 483
13.2.1 Turn-Off Oscillations with IGBTs Connected in Parallel......Page 484
13.2.2 Turn-Off Oscillations with Snappy Diodes......Page 487
13.3.1 Plasma-Extraction Transit-Time (PETT) Oscillations......Page 490
13.3.2 Dynamic Impact-Ionization Transit-Time (IMPATT) Oscillations......Page 498
References......Page 502
14.1 Definition and Basic Features......Page 503
14.2 Monolithically Integrated Systems Power ICs......Page 505
14.3 System Integration on Printed Circuit Board......Page 509
14.4 Hybrid Integration......Page 511
References......Page 518
A.1 Mobilities in Silicon......Page 520
A.2 Mobilities in 4H-SiC......Page 521
B.1 Multiplication Factors......Page 522
References for Appendices A and B......Page 524
Appendix C Thermal Parameters of Important Materials in Packaging Technology......Page 526
Appendix D Electric Parameters of Important Materials......Page 527
References for Appendices C and D......Page 528
Appendix E: Often Used Symbols......Page 529
Remark......Page 531
Index......Page 532