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Semiconducting III-V Compounds
β Scribed by cyril hilsum
- Publisher
- Pergamon Press
- Year
- 1961
- Tongue
- English
- Leaves
- 247
- Edition
- 1St Edition
- Category
- Library
No coin nor oath required. For personal study only.
β¦ Synopsis
Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that combine boron, aluminum, gallium, and indium with phosphorus, arsenic, and antimony (for example, indium antimonide, indium arsenide, gallium antimonide, and gallium arsenide).
Comprised of eight chapters, this book begins with an assessment of the crystal structure and binding of III-V compounds, focusing on the properties of the zinc-blende structure as well as processes ranging from ionicity and infrared lattice absorption to electronegativity. The reader is then introduced to the band structure of III-V compounds and its theoretical aspects, along with cyclotron resonance and the diamagnetic Landau effect. Subsequent chapters discuss impurities and defects; optical and electrical properties; photoelectric effects; and preparation and applications of III-V compounds.
This monograph will be of interest to physicists.
β¦ Table of Contents
Content:
OTHER TITLES IN THE SERIES ON SEMICONDUCTORS, Page ii
Front Matter, Page iii
Copyright, Page iv
Dedication, Page v
PREFACE, Page xi
Chapter 1 - INTRODUCTION, Pages 1-4
Chapter 2 - CRYSTAL STRUCTURE AND BINDING, Pages 5-8,8a,8b,9-26
Chapter 3 - BAND STRUCTURE, Pages 27-67
Chapter 4 - IMPURITIES AND DEFECTS, Pages 68-86,86a,87-88
Chapter 5 - PREPARATION, Pages 89-113
Chapter 6 - ELECTRICAL PROPERTIES, Pages 114-166
Chapter 7 - OPTICAL PROPERTIES AND PHOTOELECTRIC EFFECTS, Pages 167-195
Chapter 8 - APPLICATIONS, Pages 196-229
INDEX, Pages 231-239
Inside Back Cover, Page ibc1
π SIMILAR VOLUMES
<p>The frequent use of well known critical data handbooks like Beilstein, Gmelin and LandoltΒ Bornstein is impeded by the fact that merely larger libraries - often far away from the scientist's working place - can afford such precious collections. To satisfy an urgent need of many scientists for hav
<p>The application of the 111-V compound semiconductors to device fabricaΒ tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is sp