Semiconducting III-V Compounds deals with the properties of III-V compounds as a family of semiconducting crystals and relates these compounds to the monatomic semiconductors silicon and germanium. Emphasis is placed on physical processes that are peculiar to III-V compounds, particularly those that
IIIβV Semiconducting Compounds
β Scribed by M. Neuberger (auth.)
- Publisher
- Springer US
- Year
- 1971
- Tongue
- English
- Leaves
- 119
- Edition
- 1
- Category
- Library
No coin nor oath required. For personal study only.
β¦ Synopsis
The Electronic Properties Information Center has developed the Data Table as a precis of the most reliable information available for the physical, crystallographic, mechanical, thermal, electronic, magnetic and optical properties of a given material. Data Tables serve as an introduction to the graphic data compilations on the material published by the Electronic Properties Information Center, EPIC, as Data Sheets. Although the Data Sheets are principally concerned, according to the scope of the Center, with electronic and optical data, it is believed that data covering the complete property spectrum is of the first importance to every scientist and engineer, whatever his information requirements. The enthusiastic reception of these Data Tables has confirmed this opinion and increasing requests for this highly selective type of information has resulted in these IIIΒ·-V Semiconductor Compounds Data Tables. The major problem in this type of selective data compilation on a semiconducting material, lies in the material purity. Properties may vary so widely with doping, crystallinity, defects, geometric forms and the other parameters of preparation, that any attempts at comparison normally fail. On this basis, we have consisΒ tently attempted to give values derived from experiments on the highest purity single crystals or epitaxial films. At the very least, these data should be reproducible and this gives the data their principal validity. If such values however, are not available, then the next best data are reported, together with material speciΒ fications. These latter include the carrier concentration and the dopant.
β¦ Table of Contents
Front Matter....Pages i-v
Introduction....Pages 1-3
IIIβV Semiconducting Compounds Composite Data Table....Pages 4-5
Aluminum Antimonide....Pages 7-14
Aluminum Arsenide....Pages 15-17
Aluminum Nitride....Pages 18-21
Aluminum Phosphide....Pages 22-23
Boron Arsenide....Pages 24-25
Boron Nitride....Pages 26-31
Boron Phosphide....Pages 32-34
Gallium Antimonide....Pages 35-44
Gallium Arsenide....Pages 45-63
Gallium Nitride....Pages 64-65
Gallium Phosphide....Pages 66-76
Indium Antimonide....Pages 77-92
Indium Arsenide....Pages 93-103
Indium Bismuth....Pages 104-105
Indium Nitride....Pages 106-107
Indium Phosphide....Pages 108-115
β¦ Subjects
Electrical Engineering
π SIMILAR VOLUMES
<p>The frequent use of well known critical data handbooks like Beilstein, Gmelin and LandoltΒ Bornstein is impeded by the fact that merely larger libraries - often far away from the scientist's working place - can afford such precious collections. To satisfy an urgent need of many scientists for hav
<p>The application of the 111-V compound semiconductors to device fabricaΒ tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of the III-V's. The literature on this subject is sp