Semiconducting and electrocatalytic properties of sputtered cobalt oxide films

✍ Scribed by Lynn C. Schumacher; Ingo B. Holzhueter; Ian R. Hill; Michael J. Dignam

• Publisher: Elsevier Science
• Year: 1990
• Tongue: English
• Weight: 698 KB
• Volume: 35
• Category: Article
• ISSN: 0013-4686
• DOI: 10.1016/0013-4686(90)90030-4

✦ Synopsis

Cobalt oxide films, fabricated by reactive sputtering m a 100% pure 0, plasma are highly nonstolchlometrlc with a bulk oxygen to cobalt ratlo of -1 15 Conversely, surface XPS studies mdlcate an oxygen to cobalt ratio rangmg from 1 8 to 3 0 and show the presence of Co3+ only m the surface reuon of the as formed films Infrared and Raman spectra however confirm the presence of both Co3+ and Co*+ m the bulk and m&ate that these highly defective films possess the spmel structure Photoelectrochemlcal and Impedance studies show that the sputtered oxide IS a highly doped p-type semlconductor with an mdlrect bandgap of Es -1 50 eV The electrocatalytlc properties of these oxide films for oxygen reduction and evolution are reported