๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

SEM-EBIC studies of electron beam irradiation memory effects in a-Si: H

โœ Scribed by Rajopadhye, N.R.; Singh, M.; Raja, N.K.L.; Khokle, W.S.


Book ID
114454284
Publisher
The Institution of Electrical Engineers
Year
1988
Weight
417 KB
Volume
135
Category
Article
ISSN
0143-7100

No coin nor oath required. For personal study only.


๐Ÿ“œ SIMILAR VOLUMES


EBIC study of electron generation functi
โœ S. Najar; B. Equer ๐Ÿ“‚ Article ๐Ÿ“… 1994 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 706 KB

The electron beam induced current technique was used to study electron energy loss in amorphous hydrogenated silicon a-Si:H. This study leads to the determination of the electron generation function which is needed when using the variable energy electron beam induced current technique (EBIC) analysi