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Self-organized growth of InAsGaAs quantum boxes

✍ Scribed by J.M. Moison; L. Leprince; F. Barthe; F. Houzay; N. Lebouché; J.M. Gérard; J.Y. Marzin


Publisher
Elsevier Science
Year
1996
Tongue
English
Weight
603 KB
Volume
92
Category
Article
ISSN
0169-4332

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Surface selective epitaxial growth on patterned substrates is used to fabricate quantum dottunnel barrier systems, which can be used as single-electron transistor devices. In the centre of a pre-patterned constriction a self-assembled GaAs quantum dot embedded in barrier material is formed during th