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Self-limiting nature in atomic-layer epitaxy of rutile thin films from TiCl4 and H2O on sapphire (0 0 1) substrates

✍ Scribed by H. Kumagai; Y. Masuda; T. Shinagawa

Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
557 KB
Volume
314
Category
Article
ISSN
0022-0248

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✦ Synopsis

The atomic-layer epitaxy of rutile thin films on sapphire (0 0 1) substrates was studied in the controlled growth of titanium oxide films by sequential surface chemical reactions using sequentially fast pressurized titanium tetrachloride (TiCl 4 ) and water (H 2 O) vapor pulses. Optical constants and thicknesses of these rutile films were investigated in terms of vapor pressure using a variable-angle spectroscopic ellipsometer. As a result, the self-limiting nature in the atomic-layer epitaxy of rutile thin films was demonstrated clearly under various conditions of dosing reactant vapors, where growth rates were almost constant at approximately 0.077 nm/cycle (0.77 nm/min) and refractive indices were also constant at 2.59.

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