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Self-consistent electron state calculations on bond-centered impurities in silicon

✍ Scribed by M. Walk; G. Papp


Book ID
112981484
Publisher
Springer-Verlag
Year
1991
Tongue
English
Weight
281 KB
Volume
70
Category
Article
ISSN
1219-7580

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Self-consistent calculation of electroni
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With contributions from both three-dimensional (3D) electrons in heavily doped contacts and 2D electrons in the accumulation layer, a self-consistent calculation based on effective mass theory is presented for studying the anomalous behaviour of the quasi-bound levels in the accumulation layer and t