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Comparative calculations on the hyperfine parameters of bond‐centered impurities in silicon using high‐level ab initio techniques

✍ Scribed by N. Paschedag; H.U. Suter; P.F. Meier


Book ID
110315117
Publisher
Springer
Year
1997
Tongue
English
Weight
90 KB
Volume
105
Category
Article
ISSN
0304-3843

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