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Self-consistent calculations of electric subbands in p-type GaAlAs-GaAs heterojunctions

โœ Scribed by E. Bangert; G. Landwehr


Publisher
Elsevier Science
Year
1985
Tongue
English
Weight
466 KB
Volume
1
Category
Article
ISSN
0749-6036

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๐Ÿ“œ SIMILAR VOLUMES


Capacitance of a double-heterojunction G
โœ T. Jungwirth; L. Smrฤka ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 274 KB

The capacitance of a double-heterojunction structure with a wide GaAs undoped layer embedded between two selectively doped \(\mathrm{AlGaAs}\) barriers is calculated selfconsistently as a function of intensity of the in-plane magnetic field. With increasing field intensity the capacitance initially