Self-Assembling Si/SiGe Nanostructures for Light Emitters
✍ Scribed by Eberl, K.; Schmidt, O.G.; Kienzle, O.; Ernst, F.
- Book ID
- 119973398
- Publisher
- Trans Tech Publications, Ltd.
- Year
- 1999
- Tongue
- English
- Weight
- 590 KB
- Volume
- 69-70
- Category
- Article
- ISSN
- 1662-9779
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## Abstract Self‐organization during strained‐layer heteroepitaxy has been a field of intense research in the last few years. Especially the Si/SiGe heterosystem is considered a model system for strain‐driven Stranski–Krastanow growth. In this review article, we concentrate on ordered Stranski–Kras
The quantum cascade laser provides one possible method of realizing high e ciency light emission from indirect band gap materials such as silicon. Strain-symmetrized Si/SiGe samples designed to investigate the intersubband properties of quantum wells are examined. Electroluminescence data from Si/Si