✦ LIBER ✦

Self-assembled Si and SiGe nanostructures: New growth concepts and structural analysis

✍ Scribed by Bauer, G. ;Schäffler, F.

Book ID: 105363913
Publisher: John Wiley and Sons
Year: 2006
Tongue: English
Weight: 984 KB
Volume: 203
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200622405

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✦ Synopsis

Abstract

Self‐organization during strained‐layer heteroepitaxy has been a field of intense research in the last few years. Especially the Si/SiGe heterosystem is considered a model system for strain‐driven Stranski–Krastanow growth. In this review article, we concentrate on ordered Stranski–Krastanow growth of Ge and SiGe islands on prepatterned Si(001) substrates, which provide preferential nucleation sites. Perfectly ordered SiGe dot arrays in two and three dimensions are demonstrated, and the basic mechanisms for preferential nucleation in geometrically well‐defined etch pits are discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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