Self-assembling of isoelectronic impurity nanoclusters in III–V semiconductors

✍ Scribed by V.A. Elyukhin

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 186 KB
• Volume: 404
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2009.08.201

✦ Synopsis

Self-assembling of the tetrahedral nanoclusters in III-V semiconductors doped with cationic and anionic isoelectronic impurities is represented. Such doping transforms a binary compound into alloy of four binary compounds. The difference in the thermodynamic characteristics of the constituent compounds of alloys is the main reason of self-assembling. Other reason is the decrease of the strain energy after the formation of nanoclusters. The self-assembling conditions of 1B4Sb nanoclusters in GaAs:(B, Sb) are described by the minimum condition of the free energy.