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Self-assembled quantum dots: level broadening and continuous background in the sub-wetting layer region of electron energy

✍ Scribed by Karel Král; Petr Zdeněk


Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
76 KB
Volume
17
Category
Article
ISSN
1386-9477

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Self-assembled InAs/(In,Ga)As quantum dots were embedded into n-or p-type Schottky diodes to investigate the conduction and valence band states, respectively. The samples were prepared by molecular beam epitaxy, and capacitance-voltage (C(V)) spectroscopy as well as photoluminescence (PL) measuremen