Growth and photoluminescence of self-ass
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D.N. Lobanov; A.V. Novikov; N.V. Vostokov; Y.N. Drozdov; A.N. Yablonskiy; Z.F. K
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Article
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2005
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Elsevier Science
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English
โ 367 KB
The growth and photoluminescence of Ge(Si) self-assembled islands on strained Si 1รx Ge x layers (0 < x < 20%) has been investigated. Both island size and density increase when the Ge content in the predeposited Si 1รx Ge x alloy increases. The increased island density is associated with an enhanced