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Selective Si growth on partially desorbed SiO2/Si(001) surfaces

✍ Scribed by L.H. Nguyen; C. Renard; V. Yam; F. Fossard; D. Débarre; D. Bouchier


Book ID
108268972
Publisher
Elsevier Science
Year
2008
Tongue
English
Weight
676 KB
Volume
44
Category
Article
ISSN
0749-6036

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We report on the growth of thin titanium silicide layers on Si(001) by surfactant-mediated reactive deposition (SMRD) at temperatures in the range of 300-800 8C. The surface diffusion of Ti and Si is crucial for the morphology of the growing silicide layer and can be altered by the presence of a sur