Ga and Al metal dot arrays were formed on epitaxial CaF, films on Si( 111) substrates, where nucleation sites were controlled by two methods: alignment on step edges of CaF,, and local surface modification by focused electron beam exposure. Multitunneling junctions (MTJ) using self-ordering metal do
Selective nucleation and controlled growth: quantum dots on metal, insulator and semiconductor surfaces
โ Scribed by Venables, J. A.; Bennett, P. A.; Brune, H.; Drucker, J.; Harding, J. H.
- Book ID
- 119982810
- Publisher
- The Royal Society
- Year
- 2003
- Tongue
- English
- Weight
- 597 KB
- Volume
- 361
- Category
- Article
- ISSN
- 0264-3952
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