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Selective liquid-phase epitaxy growth of InxGa1−xAsyP1−y on structured GaAs(100) substrates

✍ Scribed by Z. Lábadi; V. Rakovics; A.L. Tóth


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
378 KB
Volume
28
Category
Article
ISSN
0921-5107

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Selective Growth of Cubic GaN on Pattern
✍ Wu, Jun ;Kudo, M. ;Nagayama, A. ;Yaguchi, H. ;Onabe, K. ;Shiraki, Y. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 180 KB 👁 2 views

Selective growth of cubic GaN on patterned GaAs substrates was studied. The structural and morphological properties of cubic GaN are very dependent on the orientation of the mask stripes. In the case of window stripe opening along [011] direction, (111)B facets were clearly observed in all the sampl