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Behaviour of anion vacancy in InxGa1-xAsyP1-y grown on (111)A and (100) GaAs

✍ Scribed by Q.S. Zhu; K. Hiramatsu; S. Tanaka; I. Akasaki

Publisher: Elsevier Science
Year: 1990
Tongue: English
Weight: 338 KB
Volume: 103
Category: Article
ISSN: 0022-0248
DOI: 10.1016/0022-0248(90)90213-5

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