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Selective growth and characterization of nanostructures with transmission electron microscopes

โœ Scribed by M. Shimojo; S. Bysakh; K. Mitsuishi; M. Tanaka; M. Song; K. Furuya

Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
232 KB
Volume
241
Category
Article
ISSN
0169-4332

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GalnAs/InP multilayer structures have been grown by chemical beam epitaxy in windows opened in SiO2 masks deposited on (I)01) InP substrates. The windows were narrow lines of width varying between 20 and 2pro, oriented along the [01 !] direction. The growth conditions, substratc temperature and V/Il