## Abstract We carried out nondestructive measurements of the depth profile of etchingβinduced damage in pβtype gallium nitride (pβGaN), in particular surface band bending, using Hard Xβray Photoelectron Spectroscopy (HAXβPES). HAXβPES at different takeβoff angles of photoelectrons made it clear th
β¦ LIBER β¦
Selective etching of GaN polar surface in potassium hydroxide solution studied by x-ray photoelectron spectroscopy
β Scribed by Li, Dongsheng; Sumiya, M.; Fuke, S.; Yang, Deren; Que, Duanlin; Suzuki, Y.; Fukuda, Y.
- Book ID
- 121707392
- Publisher
- American Institute of Physics
- Year
- 2001
- Tongue
- English
- Weight
- 622 KB
- Volume
- 90
- Category
- Article
- ISSN
- 0021-8979
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