Selective epitaxial growth of Si1−xGex by cold-wall ultrahigh vacuum chemical vapor deposition using disilane and germane

✍ Scribed by Masayuki Hiroi; Toru Tatsumi

• Publisher: Elsevier Science
• Year: 1992
• Tongue: English
• Weight: 373 KB
• Volume: 120
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(92)90403-6