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Selective and non-planar epitaxy of InP, GaInAs and GaInAsP using low pressure MOCVD

✍ Scribed by E.J. Thrush; M.A. Gibbon; J.P. Stagg; C.G. Cureton; C.J. Jones; R.E. Mallard; A.G. Norman; G.R. Booker

No coin nor oath required. For personal study only.

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