The reflective mask used in Extreme Ultraviolet Lithography is based on a multilayer stack reflector, over-coated with a suitable absorber. We show that in order to predict correctly the reflected field it is necessary to describe in detail the diffraction and multiple reflection processes that the
โฆ LIBER โฆ
Segmentation of Loops from Coronal EUV Images
โ Scribed by B. Inhester; L. Feng; T. Wiegelmann
- Publisher
- Springer
- Year
- 2007
- Tongue
- English
- Weight
- 652 KB
- Volume
- 248
- Category
- Article
- ISSN
- 0038-0938
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