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Computation of reflected images from EUV masks

✍ Scribed by Srinivas B. Bollepalli; Franco Cerrina

Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
675 KB
Volume
46
Category
Article
ISSN
0167-9317

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✦ Synopsis

The reflective mask used in Extreme Ultraviolet Lithography is based on a multilayer stack reflector, over-coated with a suitable absorber. We show that in order to predict correctly the reflected field it is necessary to describe in detail the diffraction and multiple reflection processes that the propagating field undergoes in the multilayer stack. The effects of absorber thickness, mask bias and partial spatial coherence are shown through several examples using numerical calculations.

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