Second-order generation of point defects in highly irradiated float zone silicon—annealing studies

✍ Scribed by I. Pintilie; E. Fretwurst; G. Kramberger; G. Lindstroem; Z. Li; J. Stahl

• Book ID: 103884755
• Publisher: Elsevier Science
• Year: 2003
• Tongue: English
• Weight: 359 KB
• Volume: 340-342
• Category: Article
• ISSN: 0921-4526
• DOI: 10.1016/j.physb.2003.09.131