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Scintillation properties of Bi4(Ge1−xSix)3O12 single crystals grown by Czochralski method

✍ Scribed by Jiang, Hua; Rooh, Gul; Kim, H.J.; Park, H.; Kim, Sunghwan; Zhang, Wansong; Fawad, U.

Book ID: 120416591
Publisher: Elsevier Science
Year: 2013
Tongue: English
Weight: 589 KB
Volume: 367
Category: Article
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2012.12.145

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## Abstract GdCa~4~O(BO~3~)~3~ single crystals grown by the Czochralski technique were investigated by conventional transmission and back‐reflection X‐ray topography. The results were correlated with the growth conditions and stoichiometry of the crystals. Extended defects, especially dislocations,