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Schottky diodes fabricated on cracked GaN epitaxial layer grown on (111) silicon

✍ Scribed by Sung-Jong Park; Heon-Bok Lee; Wang Lian Shan; Soo-Jin Chua; Jung-Hee Lee; Sung-Ho Hahm

Publisher: John Wiley and Sons
Year: 2005
Tongue: English
Weight: 199 KB
Volume: 2
Category: Article
ISSN: 1862-6351
DOI: 10.1002/pssc.200461393

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