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Scanning tunneling microscopy of the filled and empty arsenic states on the GaAs(001)-(2 × 4) surface

✍ Scribed by M. Wassermeier; V. Bressler-Hill; R. Maboudian; K. Pond; X.-S. Wang; W.H. Weinberg; P.M. Petroff

Book ID
118365182
Publisher
Elsevier Science
Year
1992
Tongue
English
Weight
505 KB
Volume
278
Category
Article
ISSN
0039-6028

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The method of reflectance anisotropy spectroscopy (RAS) has proved extremely useful in monitoring the structure of semiconductor surfaces during growth under metal-organic vapour phase epitaxy conditions. Similarly, scanning tunnelling microscopy (STM) has proved invaluable in providing information