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Scanning tunneling microscopy study of the evolution of the GaAs(001) surface during the (2 × 4)−(4 × 2) phase transition

✍ Scribed by Ilya Chizhov; Geunseop Lee; Roy F. Willis; Dmitry Lubyshev; David L. Miller

Book ID
108418566
Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
787 KB
Volume
123-124
Category
Article
ISSN
0169-4332

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The method of reflectance anisotropy spectroscopy (RAS) has proved extremely useful in monitoring the structure of semiconductor surfaces during growth under metal-organic vapour phase epitaxy conditions. Similarly, scanning tunnelling microscopy (STM) has proved invaluable in providing information