Scanning tunneling microscope light emission spectra of polycrystalline and
β Scribed by Y. Uehara; M. Kuwahara; S. Katano; S. Ushioda
- Publisher
- Elsevier Science
- Year
- 2009
- Tongue
- English
- Weight
- 865 KB
- Volume
- 149
- Category
- Article
- ISSN
- 0038-1098
No coin nor oath required. For personal study only.
β¦ Synopsis
We have observed scanning tunneling microscope light emission (STM-LE) spectra of Ge 2 Sb 2 Te 5 and Sb 2 Te 3 . Although these chalcogenide alloys exhibit band gaps less than 0.5 eV, the STM-LE was observed with a narrow spectral width at a photon energy of 1.5 eV for both materials. By analyzing its bias voltage, polarity, and temperature dependencies combined with recently reported theoretical electronic structures, we concluded that the STM-LE is excited by electronic transitions taking place in the local electronic structure having a direct gap-like shape with a band gap of 1.5 eV, commonly found in the electronic structures of both materials.
π SIMILAR VOLUMES
In the present study we use the Scanning Wneling Microscope (STM) as an instrument to investigate the photovoltaic properties of semiconducting materials. The surfaces of the layered semiconductor WSe, were optically illuminated during the tunneling process. The resulting photo-induced tunneling cur