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Scaling properties of surface growth on rough substrates generated by standard models

✍ Scribed by L. Hedayatifar; A.A. Masoudi; S. Vasheghani Farahani


Book ID
113849492
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
1013 KB
Volume
391
Category
Article
ISSN
0378-4371

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Growth of n-GaAs layer on a rough surfac
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The n-GaAs layer was successfully grown on (1 0 0) p-type silicon (p-Si) substrate by molecular beam epitaxy (MBE) using rough surface buffer layer (RSi) to reduce the tensile stress in GaAs layer grown on Si substrate. We have reviewed the initial stage and the recombination of GaAs epitaxial layer