a), B. Gil (b), N. Grandjean (c), G. Malpuech (d), A. Kavokin 1 ) (a), P. Bigenwald (e), and J. Massies (c)
Scale Effects on Exciton Localization and Nonradiative Processes in GaN/AlGaN Quantum Wells
✍ Scribed by Gallart, M. ;Morel, A. ;Taliercio, T. ;Lefebvre, P. ;Gil, B. ;All�gre, J. ;Mathieu, H. ;Grandjean, N. ;Leroux, M. ;Massies, J.
- Publisher
- John Wiley and Sons
- Year
- 2000
- Tongue
- English
- Weight
- 101 KB
- Volume
- 180
- Category
- Article
- ISSN
- 0031-8965
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a), P. Lefebvre 1 ) (a), X. B. Zhang (a), T. Taliercio (a), B. Gil (a), N. Grandjean (b), B. Damilano (b), and J. Massies (b) (a) Groupe d'Etude des Semiconducteurs,
Optical spectra of GaN, In-doped GaN, and InGaN single quantum well (SQW) structures were compared to explore the role of In for the emission mechanisms in the SQW light emitting diodes (LEDs). The internal electric field, F, due to spontaneous and piezoelectric polarization in strained quantum well