SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain

✍ Scribed by Lepselter, M.P.; Sze, S.M.

• Book ID: 120171825
• Publisher: IEEE
• Year: 1968
• Tongue: English
• Weight: 279 KB
• Volume: 56
• Category: Article
• ISSN: 0018-9219
• DOI: 10.1109/PROC.1968.6618