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Saturation currents in small-geometry bipolar transistors

โœ Scribed by Stevens, E.H.


Book ID
114594673
Publisher
IEEE
Year
1984
Tongue
English
Weight
304 KB
Volume
31
Category
Article
ISSN
0018-9383

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๐Ÿ“œ SIMILAR VOLUMES


On the base region in very small geometr
โœ E.H. Stevens ๐Ÿ“‚ Article ๐Ÿ“… 1984 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 900 KB

## Relationships between base region properties and the performance of very small geometry, bipolar transistors are discussed. It is shown that simultaneously obtaining high current gain, low sensitivity to ionic charge, and fast switching from logic gates requires a compromise in designing the tr