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Sapphire crystals grown by electron-beam process


Publisher
Elsevier Science
Year
1966
Tongue
English
Weight
152 KB
Volume
16
Category
Article
ISSN
0042-207X

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## Abstract The crystalline quality of aluminum nitride (AlN) epilayers grown on sapphire substrates by MOCVD was improved by increasing hydrogen flow rate during the high temperature growth process. The AlN epilayer exhibited a root mean square (rms) of roughness was 1.944 nm from the 2ร—2 ยตm^2^ si