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SAM key to low-voltage operation: Electronic materials

✍ Scribed by Cordelia Sealy


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
421 KB
Volume
7
Category
Article
ISSN
1369-7021

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Use of a capacitance voltage technique t
✍ F. Lanckmans; K. Maex πŸ“‚ Article πŸ“… 2002 πŸ› Elsevier Science 🌐 English βš– 237 KB

## 1 Cu drift diffusion in two inorganic low-k materials is evaluated. The diffusion is investigated by measuring shifts in the flatband voltage of capacitance / voltage measurements on Cu gate capacitors after bias temperature 1 stressing. The Cu drift rate in SiO C (2.7 # k # 3.1) is considerabl