✦ LIBER ✦
Use of a capacitance voltage technique to study copper drift diffusion in (porous) inorganic low-k materials
✍ Scribed by F. Lanckmans; K. Maex
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 237 KB
- Volume
- 60
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
1
Cu drift diffusion in two inorganic low-k materials is evaluated. The diffusion is investigated by measuring shifts in the flatband voltage of capacitance / voltage measurements on Cu gate capacitors after bias temperature 1 stressing. The Cu drift rate in SiO C (2.7 # k # 3.1) is considerably lower than in PECVD oxide. This
x y electrical method is not suited for a porous silicon resin (k ¯2.0) because of the occurrence of instabilities in the metal / dielectric. A modification of the measurement technique is required. The modification consists of 1