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Rosette Microstructure in Indented (001) GaAs Single Crystals and the α/β Asymmetry

✍ Scribed by Levade, C. ;Vanderschaeve, G.


Book ID
101312089
Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
187 KB
Volume
171
Category
Article
ISSN
0031-8965

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## Abstract MnAs layers with a 5 nm thick amorphous GaAs capping layer were grown epitaxially on GaAs(001). Generalized ellipsometric measurements were made on a 45 nm thick layer in the spectral range 1.5–4 eV at temperatures between –10 °C and 50 °C in steps of 5 °C. By using both the diagonal an