## Abstract MnAs layers with a 5 nm thick amorphous GaAs capping layer were grown epitaxially on GaAs(001). Generalized ellipsometric measurements were made on a 45 nm thick layer in the spectral range 1.5–4 eV at temperatures between –10 °C and 50 °C in steps of 5 °C. By using both the diagonal an
✦ LIBER ✦
Thermal evolution of α- and β-phases in the thin GaN on (001) GaAs
✍ Scribed by Y.J Park; E.K Koh; C.S Park; I.-W Park; E.K Kim
- Book ID
- 108388409
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 118 KB
- Volume
- 411
- Category
- Article
- ISSN
- 0040-6090
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