๐”– Bobbio Scriptorium
โœฆ   LIBER   โœฆ

Room-Temperature Tunnel Magnetoresistance and Spin-Polarized Tunneling through an Organic Semiconductor Barrier

โœ Scribed by Santos, T. S.; Lee, J. S.; Migdal, P.; Lekshmi, I. C.; Satpati, B.; Moodera, J. S.

Book ID
119951791
Publisher
The American Physical Society
Year
2007
Tongue
English
Weight
443 KB
Volume
98
Category
Article
ISSN
0031-9007

No coin nor oath required. For personal study only.

๐Ÿ“œ SIMILAR VOLUMES

Tunneling time and the post-tunneling po
Tunneling time and the post-tunneling position of an electron through a potential barrier in an anisotropic semiconductor
โœ Kyoung-Youm Kim; Byoungho Lee ๐Ÿ“‚ Article ๐Ÿ“… 1998 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 148 KB

Tunneling time and post-tunneling position of an electron incident on a heterostructure grown on anisotropic materials are derived by solving an effective mass equation including off-diagonal effective mass tensor elements. The effects of different effective masses for a heterostructure junction are