Room-temperature red emission from light-emitting diodes with Eu-doped GaN grown by organometallic vapor phase epitaxy

✍ Scribed by A. Nishikawa; N. Furukawa; T. Kawasaki; Y. Terai; Y. Fujiwara

• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 442 KB
• Volume: 33
• Category: Article
• ISSN: 0925-3467
• DOI: 10.1016/j.optmat.2010.10.010