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Room temperature oxidation of Cu3Ge films grown on Si and Si1−xGex substrates

✍ Scribed by Hsuan-Han Liang; Jian-Shing Luo; Wen-Tai Lin

Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
277 KB
Volume
33
Category
Article
ISSN
0968-4328

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We present the heterogeneous growth of InAs quantum dots (QDs) on Si platform using GaAs/Ge/ Si 1 À x Ge x /Si substrate. Self-assembled InAs QDs were grown on GaAs/Ge/Si 1 À x Ge x /Si substrate by employing molecular beam epitaxy (MBE). The areal density, width and height of QDs were characterized