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Room temperature operation of Si single-electron memory with self-aligned floating dot gate

✍ Scribed by Nakajima, Anri; Futatsugi, Toshiro; Kosemura, Kinjiro; Fukano, Tetsu; Yokoyama, Naoki

Book ID: 120295777
Publisher: American Institute of Physics
Year: 1997
Tongue: English
Weight: 407 KB
Volume: 70
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.118653

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