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[IEEE International Electron Devices Meeting 1998. Technical Digest - San Francisco, CA, USA (6-9 Dec. 1998)] International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217) - Room temperature single electron effects in Si quantum dot memory with oxide-nitride tunneling dielectrics

✍ Scribed by Ilgweon Kim, ; Sangyeon Han, ; Hyungsik Kim, ; Jongho Lee, ; Bumho Choi, ; Sungwoo Hwang, ; Doyeol Ahn, ; Hyungcheol Shin,

Book ID: 126642981
Publisher: IEEE
Year: 1998
Weight: 737 KB
Category: Article
ISBN-13: 9780780347748
DOI: 10.1109/IEDM.1998.746291

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